A group of Japanese researchers from Tohoku University and Hitachi claim to have developed a new type of memory element structure for magnetoresistive random access memory (MRAM) using a double layered composition made from ruthenium and cobalt-iron-boron.

This method could prove a stepping stone towards gigabit-level versions of the technology, tradingmarkets.com reports.

The team developed the memory element by using the spin injection technique, which allows the surrounding structure of the element to be simplified. Meanwhile, the free layer employed the aforesaid composition in a laminated-ferri structure modelled on that used by MRAM devices from Freescale Semiconductor.

The combination of the two structures means that data can be compacted and rewritten using a smaller current density, in turn, allowing the transistors to be built with smaller dimensions.

This enables the memory chip to store more bits, the team claims.

Preliminary tests revealed that bits can be rewritten to the element with a current density of one million amperes per sq cm, with the results also indicating a level of high thermal stability that would allow for the bits to be stored for over a decade.

The development raises the possibility of developing a 45-nanometer process to develop the MRAM chip, which might be capable of the gigabit storage capacity of DRAM.

Source:

HITACHI'S MEMORY ELEMENT STRUCTURE OPENS DOOR TO GIGABIT MRAM, 19/12/07
http://www.tradingmarkets.com/.site/news/Stock%20News/930857/

Hitachi Improves Laminated Ferri Structure in Spin Injection MRAM, 14/11/07
http://www.mram-info.com/technical_research/hitachi_improves_laminated_ferri_structure_in_spin_injection_mram


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